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Durable photointerrupter sensor SHARP GP1S51VJ000F featuring black NORYL resin case and RoHS compliance

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Durable photointerrupter sensor SHARP GP1S51VJ000F featuring black NORYL resin case and RoHS compliance

Description : DIP-4 Photointerrupters - Slot Type - Transistor Output RoHS

Mfr. Part # : GP1S51VJ000F

Model Number : GP1S51VJ000F

Package : DIP-4

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Product Overview

The SHARP GP1S51VJ000F is a standard, transmissive photointerrupter designed for non-contact sensing applications. Featuring a phototransistor output and an opposing emitter and detector housed within a case, it offers a gap width of 3mm and a slit width of 0.5mm on the detector side. This device is ideal for general-purpose detection of object presence or motion, commonly found in printers, FAX machines, and optical storage units. Its design includes additional screw fixing holes for enhanced mounting flexibility. The GP1S51VJ000F is lead-free and RoHS directive compliant.

Product Attributes

Brand: SHARP
Model: GP1S51VJ000F
Certifications: RoHS directive compliant
Material (Case): Black NORYL resin
Material (Lead frame plating): Solder dip (Sn-3Ag-0.5Cu)
Origin: Japan, Indonesia or Philippines (Indicated on the packing case)

Technical Specifications

Specification	Value	Unit
Gap Width	3	mm
Slit Width (detector side)	0.5	mm
Package Dimensions	12.21018	mm
Product Mass	approx. 0.7	g
Input Forward Current (IF)	50	mA
Input Peak Forward Current (IFM)	1	A
Input Reverse Voltage (VR)	6	V
Input Power Dissipation (P)	75	mW
Output Collector-Emitter Voltage (VCEO)	35	V
Output Emitter-Collector Voltage (VECO)	6	V
Output Collector Current (IC)	20	mA
Output Collector Power Dissipation (PC)	75	mW
Operating Temperature (Topr)	-25 to +85	C
Storage Temperature (Tstg)	-40 to +100	C
Soldering Temperature (Tsol)	260 (for 5s or less)	C
Input Forward Voltage (VF) (IF=20mA)	- / 1.25 / 1.4	V
Input Peak Forward Voltage (VFM) (IFM=0.5A)	3 / 4	V
Input Reverse Current (IR) (VR=3V)	- / - / 10	A
Output Collector Dark Current (ICEO) (VCE=20V)	- / 1 / 100	nA
Transfer Characteristics Collector Current (IC) (VCE=5V, IF=20mA)	0.5 / - / 5	mA
Transfer Characteristics Collector-Emitter Saturation Voltage (VCE(sat)) (IF=40mA, IC=0.5mA)	- / - / 0.4	V
Response Time Rise Time (tr) (VCE=2V, IC=2mA, RL=100)	- / 3 / 15	s
Response Time Fall Time (tf) (VCE=2V, IC=2mA, RL=100)	- / 4 / 20	s
Photo emitter Material	Gallium arsenide (GaAs)	-
Photo emitter Max. light emitting wavelength	950	nm
Photo emitter I/O Frequency	0.3	MHz
Photodetector Material	Silicon (Si)	-
Photodetector Max. Sensitivity wavelength	1200	nm
Photodetector Sensitivity wavelength	400 to 800	nm
Photodetector Response time	3	s

2412232004_SHARP-GP1S51VJ000F_C390726.pdf

Quality Durable photointerrupter sensor SHARP GP1S51VJ000F featuring black NORYL resin case and RoHS compliance for sale

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