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Low profile photointerrupter SHARP GP1S196HCZ0F with 0.3 millimeter slit width and 1.1 millimeter gap

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Low profile photointerrupter SHARP GP1S196HCZ0F with 0.3 millimeter slit width and 1.1 millimeter gap

Slot Width : 1.1mm

Width : 2mm

Height : 2.7mm

Slit Width : 0.3mm

Length : 3.1mm

Voltage - Forward(Vf) : 1.2V

Rise Time : 50us

Fall Time : 50us

Description : 1.1mm 1.2V DIP-4 Photointerrupters - Slot Type - Transistor Output RoHS

Mfr. Part # : GP1S196HCZ0F

Model Number : GP1S196HCZ0F

Package : DIP-4

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Product Overview

The GP1S196HCZ0F/GP1S196HCZSF is a compact, transmissive photointerrupter featuring a phototransistor output. Designed for non-contact sensing, it utilizes a unique molding technology for a smaller footprint compared to other devices in its family. With a narrow gap of 1.1mm and a slit width of 0.3mm, it is ideal for general-purpose detection of object presence or motion in applications such as printers and camera lens control. Available in Through-hole (GP1S196HCZ0F) and SMT (GP1S196HCZSF) packages, this RoHS directive compliant component offers a low-profile solution.

Product Attributes

Brand: SHARP
Origin: Japan
Certifications: RoHS directive compliant
Material (Case): Black polyphernylene sulfide resin (UL94 V-0)
Material (Lead frame): 42Alloy
Material (Lead frame plating): SnCu (Cu : TYP. 2%)

Technical Specifications

Model	Gap	Slit Width (detector side)	Package Dimensions (L x W x H)	Product Mass	Output Type	Package Type
GP1S196HCZ0F	1.1mm	0.3mm	3.1 2 2.7mm	approx. 0.022g	Phototransistor	Through-hole
GP1S196HCZSF	1.1mm	0.3mm	3.1 2 2.7mm	approx. 0.02g	Phototransistor	SMT

Parameter	Symbol	Rating	Unit	Condition
Input Forward current	IF	30	mA
Reverse voltage	VR	6	V
Power dissipation	P	75	mW
Collector-emitter voltage	VCEO	35	V
Emitter-collector voltage	VECO	6	V
Collector current	IC	20	mA
Collector power dissipation	PC	75	mW
Total power dissipation	Ptot	100	mW
Operating temperature	Topr	-25 to +85	C
Storage temperature	Tstg	-40 to +100	C
Soldering temperature	Tsol	260	C	For 3s or less

Parameter	Symbol	Condition	MIN.	TYP.	MAX.	Unit
Forward voltage	VF	IF=20mA	-	1.2	1.4	V
Reverse current	IR	VR=3V	-	-	10	A
Collector dark current	ICEO	VCE=20V	-	-	100	nA
Collector current	IC	VCE=5V, IF=5mA	100	-	400	A
Collector-emitter saturation voltage	VCE(sat)	IF=10mA, IC=40A	-	-	0.4	V
Rise time	tr	VCE=5V, IC=100A, RL=1k	-	50	150	s
Fall time	tf	VCE=5V, IC=100A, RL=1k	-	50	150	s

Part	Material	Maximum Sensitivity wavelength (nm)	Sensitivity wavelength (nm)	Response time (s)
Photodetector	Silicon (Si)	930	700 to 1 200	20

Part	Material	Maximum light emitting wavelength (nm)	I/O Frequency (MHz)
Photo emitter	Gallium arsenide (GaAs)	950	0.3

Specification	Value	Unit
Unspecified tolerance	0.1	mm
Burr's dimensions	0.15 MAX.	mm

2410121847_SHARP-GP1S196HCZ0F_C394682.pdf

Low profile photointerrupter SHARP GP1S196HCZ0F with 0.3 millimeter slit width and 1.1 millimeter gap Images

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