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Phototransistor output surface mount photointerrupter SHARP GP1S092HCPIF compact transmissive type for detection

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Phototransistor output surface mount photointerrupter SHARP GP1S092HCPIF compact transmissive type for detection

Operating Temperature : -25℃~+85℃

Width : 2.6mm

Slot Width : 2mm

Height : 2.9mm

Slit Width : 0.3mm

Length : 4.5mm

Voltage - Forward(Vf) : 1.2V

Rise Time : 50us

Output Current : 20mA

Fall Time : 50us

Description : 2mm 1.2V SMD-4P Photointerrupters - Slot Type - Transistor Output RoHS

Mfr. Part # : GP1S092HCPIF

Model Number : GP1S092HCPIF

Package : SMD-4P

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SHARP GP1S092HCPIF Compact Transmissive Photointerrupter

The SHARP GP1S092HCPIF is a compact, surface-mount transmissive photointerrupter featuring a phototransistor output. Designed for non-contact sensing, it integrates opposing emitter and detector within a durable molding. Its unique design includes a D-shaped positioning pin for precise PCB placement and is available in Tape and Reel packaging, making it ideal for automated manufacturing processes. This device is suitable for general-purpose detection of object presence or motion, finding applications in printers and camera lens control.

Product Attributes

Brand: SHARP
Model: GP1S092HCPIF
Type: Compact Transmissive Photointerrupter
Output: Phototransistor
Mounting Type: Surface Mount (SMT)
Packaging: Tape and Reel (T&R)
Compliance: RoHS directive compliant
Origin: Japan (Date code indicates production year and month)
Material (Case): Black polyphernylene sulfide resin (UL94 V-0)
Material (Lead frame): 42Alloy
Lead frame plating: SnCu plating

Technical Specifications

Parameter	Symbol	Condition	Min.	Typ.	Max.	Unit
Dimensions
Package Dimensions				4.5×2.6×2.9		mm
Gap Width				2		mm
Slit Width (detector side)				0.3		mm
Product mass				0.05		g
Absolute Maximum Ratings
Forward current	IF				50	mA
Reverse voltage	VR				6	V
Power dissipation	P				75	mW
Collector-emitter voltage	VCEO				35	V
Emitter-collector voltage	VECO				6	V
Collector current	IC				20	mA
Collector power dissipation	PC				75	mW
Total power dissipation	Ptot				100	mW
Operating temperature	Topr		-25		+85	°C
Storage temperature	Tstg		-40		+100	°C
Soldering temperature	Tsol	For 5s or less			260	°C
Electro-optical Characteristics (Ta=25°C)
Forward voltage	VF	IF=20mA		1.2	1.4	V
Reverse current	IR	VR=3V			10	μA
Collector dark current	ICEO	VCE=20V			100	nA
Collector current	IC	VCE=5V, IF=5mA	100		400	μA
Collector-emitter saturation voltage	VCE(sat)	IF=10mA, IC=40μA			0.4	V
Rise time	tr	VCE=5V, IC=100μA, RL=1kΩ		50	150	μs
Fall time	tf	VCE=5V, IC=100μA, RL=1kΩ		50	150	μs
Internal Components
Photodetector		Category: Phototransistor
		Material: Silicon (Si)
		Maximum Sensitivity wavelength		930		nm
		Sensitivity wavelength	700 to 1200			nm
		Response time		20		μs
Photo emitter		Category: Infrared emitting diode (non-coherent)
		Material: Gallium arsenide (GaAs)
		Maximum light emitting wavelength		950		nm
		I/O Frequency		0.3		MHz

2410121853_SHARP-GP1S092HCPIF_C69422.pdf

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