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OMRON EE SY410 reflective photomicrosensor featuring temperature compensation and wide voltage range

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OMRON EE SY410 reflective photomicrosensor featuring temperature compensation and wide voltage range

Sensing Distance : 5mm

Description : 5mm DIP-5 Reflective - Logic Output RoHS

Mfr. Part # : EE-SY410

Model Number : EE-SY410

Package : DIP-5

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Product Overview

The EE-SY310/-SY410 are compact, reflective photomicrosensors featuring an integrated IC chip with a built-in detector element and amplifier, including temperature compensation. These sensors offer a wide supply voltage range of 4.5 to 16 VDC and can directly interface with C-MOS and TTL logic. The EE-SY310 is a Dark ON model, while the EE-SY410 is a Light ON model. They are designed for sensing applications with a recommended sensing distance of 5.0 mm.

Product Attributes

  • Brand: Omron (implied by product code format)
  • Type: Photomicrosensor (Reflective)
  • Housing: Molded

Technical Specifications

Model Dimensions (mm) Features Supply Voltage (VDC) Sensing Distance (mm) Model Type
EE-SY310/-SY410 Refer to diagram (units in mm) Built-in detector element & amplifier, Temperature compensation circuit, Compact reflective model 4.5 to 16 Recommended: 5.0
  • EE-SY310: Dark ON
  • EE-SY410: Light ON
Parameter Symbol Rated Value / Condition Notes
Emitter Forward Current IF 50 mA 1
Emitter Reverse Voltage VR 4 V
Emitter Pulse Forward Current IFP 1 A 2
Detector Power Supply Voltage VCC 16 V
Detector Output Voltage VOUT 28 V
Detector Output Current IOUT 16 mA
Permissible Output Dissipation POUT 250 mW 1
Operating Ambient Temperature Topr 40C to 75C
Storage Temperature Tstg 40C to 85C
Soldering Temperature Tsol 260C 3
Electrical and Optical Characteristics Symbol Value Condition
Emitter Forward Voltage VF 1.2 V typ., 1.5 V max. IF = 20 mA
Emitter Reverse Current IR 0.01 A typ., 10 A max. VR = 4 V
Emitter Peak Emission Wavelength P 920 nm typ. IF = 20 mA
Detector Low-level Output Voltage VOL 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, IOL = 16 mA, without incident light (EE-SY310), with incident light (EE-SY410)
Detector High-level Output Voltage VOH 15 V min. Vcc = 16 V, RL = 1 k, with incident light (EE-SY310), without incident light (EE-SY410)
Detector Current Consumption ICC 3.2 mA typ., 10 mA max. Vcc = 16 V
Detector Peak Spectral Sensitivity Wavelength P 870 nm typ. VCC = 4.5 to 16 V
LED Current when Output is OFF IFT OFF 6 mA typ., 15 mA max. VCC = 4.5 to 16 V
LED Current when Output is ON IFT ON (Values not explicitly stated, implied by Hysteresis) VCC = 4.5 to 16 V
Hysteresis H 17% typ. VCC = 4.5 to 16 V
Response Frequency f 50 Hz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Response Delay Time (tPLH) tPLH 3 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Response Delay Time (tPHL) tPHL 20 s typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA

Notes:

  • 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C.
  • 2. The pulse width is 10 s maximum with a frequency of 100 Hz.
  • 3. Complete soldering within 10 seconds.
  • "With incident light" denotes the condition whereby the light reflected by white paper with a reflection factor of 90% at a sensing distance of 5 mm is received by the photo IC when the forward current (IF) of the LED is 20 mA.
  • Sensing object: White paper with a reflection factor of 90% at a sensing distance of 5 mm.
  • Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC is turned from ON to OFF and when the photo IC is turned from OFF to ON.

2501101203_OMRON-EE-SY410_C2837181.pdf


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