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2048 element CCD linear image sensor TOSHIBA TCD1209DG8ZK with high sensitivity and low dark current

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2048 element CCD linear image sensor TOSHIBA TCD1209DG8ZK with high sensitivity and low dark current

Sensor Type : CCD Image Sensor

Pixel Size : 14umx14um

Optical Format(inch) : -

Description : CCD Image Sensor 14umx14um DIP-22 Image Sensors, Camera RoHS

Mfr. Part # : TCD1209DG(8Z,K)

Model Number : TCD1209DG(8Z,K)

Package : DIP-22

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Product Overview

The TOSHIBA TCD1209DG is a high-sensitivity, low-dark-current CCD linear image sensor. It features 2048 elements arranged to provide 8 lines/mm resolution across a B4 size paper. Operated by a 5.0 V pulse and a 12 V power supply, this sensor is suitable for applications requiring precise linear imaging.

Product Attributes

Brand: TOSHIBA
Product Line: CCD Linear Image Sensor
Model: TCD1209DG
Origin: Japan (implied by Toshiba's manufacturing base and datasheet origin)

Technical Specifications

Characteristic	Symbol	Min	Typ.	Max	Unit	Notes
General Features
Number of Image Sensing Elements			2048		elements
Image Sensing Element Size			14μm by 14μm on 14μm center
Photo Sensing Region			High sensitive PN photodiode
Clock			2-phase (5 V)
Power Supply Voltage	VOD		12		V (typ.)
Package			22 pin CERDIP
Absolute Maximum Ratings
Clock pulse voltage	Vφ	-0.3		+8.0	V	Note 1
Shift pulse voltage	VSH	-0.3		+15.0	V	Note 1
Reset pulse voltage	VRS	-0.3		+15.0	V	Note 1
Clamp pulse voltage	VCP	-0.3		+15.0	V	Note 1
Power supply voltage	VOD	-0.3		+15.0	V	Note 1
Operating temperature	Topr	-25		+60	°C
Storage temperature	Tstg	-40		+100	°C
Optical/Electrical Characteristics (Ta = 25°C, VOD = 12 V, Vφ = VSH = VRS = VCP = 5 V (pulse), fφ = 1.0 MHz, tINT = 10 ms)
Sensitivity	R	25	31	37	V/lx·s
Photo response non uniformity	PRNU (1)		3	10	%	Note 2
Photo response non uniformity	PRNU (3)		4	10	mV	Note 8
Saturation output voltage	VSAT	1.5	2.0		V	Note 3
Saturation exposure	SE	0.04	0.06		lx·s	Note 4
Dark signal voltage	VDRK		1.0	2.5	mV	Note 5
Dark signal non uniformity	DSNU		1.0	2.5	mV	Note 5
DC power dissipation	PD		160	400	mW
Total transfer efficiency	TTE	92	98		%
Output impedance	ZO		0.2	1.0	kΩ
Dynamic range	DR		2000			Note 6
DC output signal voltage	VOS	4.0	5.5	7.0	V	Note 7
Random noise	NDσ		0.6		mV	Note 9
Recommended Operating Conditions (Ta = 25°C)
Clock pulse voltage “H” level	Vφ1, Vφ2	4.5	5.0	5.5	V
Clock pulse voltage “L” level	Vφ1, Vφ2	0	0	0.5	V
Last stage clock pulse voltage “H” level	Vφ2B	4.5	5.0	5.5	V
Last stage clock pulse voltage “L” level	Vφ2B	0	0	0.5	V
Shift pulse voltage “H” level	VSH	4.5	5.0	5.5	V
Shift pulse voltage “L” level	VSH	0	0	0.5	V
Reset pulse voltage “H” level	VRS	4.5	5.0	5.5	V
Reset pulse voltage “L” level	VRS	0	0	0.5	V
Clamp pulse voltage “H” level	VCP	4.5	5.0	5.5	V
Clamp pulse voltage “L” level	VCP	0	0	0.5	V
Power supply voltage	VOD	11.4	12.0	13.0	V
Clock Characteristics (Ta = 25°C)
Clock pulse frequency	fφ		1	20	MHz
Reset pulse frequency	fRS		1	20	MHz
Clock capacitance	Cφ1		200		pF	Note 10
Clock capacitance	Cφ2		200		pF	Note 10
Last stage clock capacitance	Cφ2B		10	20	pF
Shift gate capacitance	CSH		30		pF
Reset gate capacitance	CRS		10	20	pF
Clamp gate capacitance	CCP		10	20	pF

2410121716_TOSHIBA-TCD1209DG-8Z-K_C5179035.pdf

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