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DIODES AH180 PG A MicroPower Hall Effect Sensor Switch with enhanced immunity to stress and RF noise

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DIODES AH180 PG A MicroPower Hall Effect Sensor Switch with enhanced immunity to stress and RF noise

Operating Current : 8uA

Operating Temperature : -40℃~+85℃

Voltage - Supply : 2.5V~5.5V

Magnetic Field Range : ±6mT

Description : SIP-3 Switches (Solid State) RoHS

Mfr. Part # : AH180-PG-A

Model Number : AH180-PG-A

Package : SIP-3

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AH180 MicroPower Omnipolar Hall-Effect Sensor Switch

The AH180 is a micro-power Omnipolar Hall-Effect switch designed for portable and battery-powered equipment such as cellular phones, PDAs, and portable PCs. It offers reliable performance across its operating range due to its dual Hall-Effect plates and chopper-stabilized architecture. Optimized for low power consumption (24W at 3V) and a wide supply voltage range (2.5V to 5.5V), the AH180 features a single open-drain output that activates with either a north or south magnetic pole. The output switches ON when magnetic flux density exceeds the operate point (Bop) and OFF when it falls below the release point (Brp). It is available in SIP-3 (Ammo Pack), SIP-3 (Bulk Pack), and SC59 packages.

Product Attributes

  • Brand: Diodes Incorporated
  • Operation: Omnipolar (North or South pole)
  • Power Consumption: Micropower
  • Output: Single Open Drain
  • Operating Voltage: 2.5V to 5.5V
  • Temperature Stability: Superior (Chopper Stabilized Design)
  • Immunity: Enhanced immunity to stress and good RF noise immunity
  • Operating Temperature: -40C to +85C
  • ESD Rating: > 6kV (HBM) for SIP-3 and SC59 packages
  • Packages: SIP-3 (Ammo Pack), SIP-3 (Bulk Pack), SC59
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Automotive Applications: Contact Diodes representative for AEC-Q100/101/200 qualification, PPAP capability, and IATF 16949 manufacturing.

Technical Specifications

ParameterConditionsMinTypMaxUnit
Electrical Characteristics
Supply Voltage (Vdd)Operating2.55.5V
Ambient Temperature (TA)Operating-40+85C
Output On Voltage (VOUT)IOUT =1mA0.10.3V
Output Leakage Current (IOFF)VOUT =5.5V, Output off<0.11A
Supply Current (Idd(en))Chip enable, TA = +25C, Vdd = 3V36mA
Supply Current (Idd(en))Chip enable, TA = -40 to +85C, Vdd = 2.5V to 5.5V39mA
Supply Current (Idd(dis))Chip disable, TA = +25C, Vdd = 3V510A
Supply Current (Idd(dis))Chip disable, TA = -40 to +85C, Vdd = 2.5V to 5.5V515A
Average Supply Current (Idd(avg))TA = +25C, Vdd = 3V816A
Average Supply Current (Idd(avg))TA = -40 to +85C, Vdd = 2.5V to 5.5V824A
Awake Time (tAWAKE)Note 575125s
Period (tPERIOD)Note 575125ms
Duty Cycle0.1%
Magnetic Characteristics (1mT=10 Gauss)
Operation Point (Bops)South Pole to Brand Side4060Gauss
Operation Point (Bopn)North Pole to Brand Side-60-40Gauss
Release Point (Brps)South Pole to Brand Side1030Gauss
Release Point (Brpn)North Pole to Brand Side-30-10Gauss
Hysteresis (Bhy)|Bopx|-|Brpx|15Gauss

2412251151_DIODES-AH180-PG-A_C842165.pdf


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