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CMOS Hall effect latch sensor GoChip Elec Tech Shanghai GH1120KSE for current switching and RPM detection

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CMOS Hall effect latch sensor GoChip Elec Tech Shanghai GH1120KSE for current switching and RPM detection

Sample Frequency : 10kHz

Operation Points : 3mT

Operating Current : 2mA

Release Points : 3mT

Operating Temperature : -40℃~+125℃

Output Current : 25mA

Voltage - Supply : 3.5V~24V

Description : SOT-23-3L Switches (Solid State) RoHS

Mfr. Part # : GH1120KSE

Model Number : GH1120KSE

Package : SOT-23-3L

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Product Overview

The GH1120 is a Hall-effect latch designed in CMOS technology, featuring a wide operating voltage range (3.5V to 24V DC) and an extended temperature range (40 to +125). It includes an internal voltage regulator, Hall sensor with dynamic offset cancellation, Schmitt trigger, and an open-drain output driver. The device operates with a high magnetic sensitivity (Bhy=60 Gauss Typ.). Its output is "on" (Low) with no magnetic field and switches "off" (High) when the magnetic flux density exceeds the operate point (Bop), latching off until the flux density drops below the release point (Brp). This makes it suitable for applications requiring precise rotor position sensing, current switching, encoders, and RPM detection in automotive, industrial, and consumer electronics.

Product Attributes

Brand: GOCHIP ELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD.
Certifications: Lead Free Finish/RoHS Compliant
Material: CMOS Technology
Package Options: SIP-3L (TO-92S), SC59 (SOT-23-3L)

Technical Specifications

Parameter	Description	Value	Unit
Output Sink Current	25mA (Typ.)	25	mA
Operating Temperature		-40 to +125
Operating Voltage	DC Operation Voltage	3.5 to 24	V
Magnetic Sensitivity (Hysteresis)	Bhy	60	Gauss (Typ.)
Supply Current (IDD)	Typical at VDD=12V, OUT "OFF"	2.0	mA
Output Saturation Voltage (VO(SAT))	Typical at VDD=12V, OUT "ON", Io=10mA	300	mV
Output Saturation Voltage (VO(SAT))	Typical at VDD=12V, OUT "ON", Io=20mA	500	mV
Output Leakage Current (ILE)	Released	10	A
Rise Time	RL=820, CL=20pF	0.45	S
Fall Time	RL=820, CL=20pF	0.45	S
Maximum Switching Frequency		90	KHz
Operation Point (Bop)		80	Gauss
Release Point (Brp)		5	Gauss
Hysteresis (Bhy)		60	Gauss
Power Dissipation	SIP-3L	450	mW
Power Dissipation	SC59	230	mW

1811061518_GoChip-Elec-Tech--Shanghai-GH1120KSE_C266229.pdf

Quality CMOS Hall effect latch sensor GoChip Elec Tech Shanghai GH1120KSE for current switching and RPM detection for sale

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