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Consumption Omnipolar Hall Effect Sensor Switch DIODES AH180 PG B with Chopper Stabilized Architecture

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Consumption Omnipolar Hall Effect Sensor Switch DIODES AH180 PG B with Chopper Stabilized Architecture

Operating Current : 8uA

Operation Points : ±6mT

Release Points : ±1mT

Operating Temperature : -40℃~+85℃

Voltage - Supply : 2.5V~5.5V

Description : SIP-3 Switches (Solid State) RoHS

Mfr. Part # : AH180-PG-B

Model Number : AH180-PG-B

Package : SIP-3

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AH180 MicroPower Omnipolar Hall-Effect Sensor Switch

The AH180 is a micro-power, omnipolar Hall-Effect switch designed for portable and battery-powered equipment such as cellular phones, PDAs, and portable PCs. It features a chopper-stabilized architecture for reliable operation across its operating range. Optimized for low power consumption (24W at 3V) and a wide supply voltage range (2.5V to 5.5V), the AH180's single open-drain output activates with either a north or south magnetic pole. It is available in SIP-3 (Ammo Pack), SIP-3 (Bulk Pack), and SC59 packages.

Product Attributes

Brand: Diodes Incorporated
Product Status: OBSOLETE PART DISCONTINUED
Omnipolar Operation (North or South pole)
Micropower Operation
Single Open Drain Output
2.5V to 5.5V Operating Voltage
Chopper Stabilized Design
Superior Temperature Stability
Minimal Switch-Point Drift
Enhanced Immunity to Stress
Good RF Noise Immunity
-40C to +85C Operating Temperature
ESD (HBM) > 6kV
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. Green Device

Technical Specifications

Parameter	Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
Vdd Supply Voltage				7	V
B Magnetic Flux Density				Unlimited
TS Storage Temperature Range		-65		+150	C
PD Package Power Dissipation	SIP-3 (Ammo Pack), SIP-3 (Bulk Pack)			550	mW
PD Package Power Dissipation	SC59			230	mW
TJ Maximum Junction Temperature				+150	C
Recommended Operating Conditions
Vdd Supply Voltage	Operating	2.5		5.5	V
TA Operating Ambient Temperature	Operating	-40		+85	C
Electrical Characteristics (TA = +25C, Vdd = 3V; unless otherwise specified.)
VOUT Output On Voltage	IOUT =1mA		0.1	0.3	V
IOFF Output Leakage Current	VOUT =5.5V, Output off		<0.1	1	A
Idd(en) Supply Current	Chip enable, TA = +25C, Vdd = 3V		3	6	mA
Idd(en) Supply Current	Chip enable, TA = -40 to +85C, Vdd = 2.5V to 5.5V		3	9	mA
Idd(dis) Supply Current	Chip disable, TA = +25C, Vdd = 3V		5	10	A
Idd(dis) Supply Current	Chip disable, TA = -40 to +85C, Vdd = 2.5V to 5.5V		5	15	A
Idd(avg) Average supply current	TA = +25C, Vdd = 3V		8	16	A
Idd(avg) Average supply current	TA = -40 to +85C, Vdd = 2.5V to 5.5V		8	24	A
tAWAKE Awake Time (Note 5)			75	125	s
tPERIOD Period (Note 5)			75	125	ms
D.C. Duty Cycle			0.1		%
Magnetic Characteristics (TA = +25C, Vdd = 3V, Notes 6 & 7) (1mT=10 Gauss)
Bops (South Pole to Brand Side) Operation Point			40	60	Gauss
Bopn (North Pole to Brand Side)		-60	-40		Gauss
Brps (South Pole to Brand Side) Release Point		10	30		Gauss
Brpn (North Pole to Brand Side)			-30	-10	Gauss
Bhy (\|Bopx\|-\|Brpx\|) Hysteresis			15		Gauss

2412251055_DIODES-AH180-PG-B_C443886.pdf

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