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Latched hall effect sensor HUAXIN S21C with two wire current output and open short circuit diagnostics

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Latched hall effect sensor HUAXIN S21C with two wire current output and open short circuit diagnostics

Sample Frequency : 20kHz

Operation Points : 8mT

Release Points : 8mT

Operating Temperature : -40℃~+150℃

Voltage - Supply : 4V~24V

Description : TO-92S Switches (Solid State) RoHS

Mfr. Part # : S21C

Model Number : S21C

Package : TO-92S

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Product Overview

The HXS21C is a current-output, latched Hall effect sensor based on a 60V BCD process platform, utilizing high-frequency chopping technology. It offers high magnetic field consistency and symmetry across its full operating voltage and temperature range. The integrated voltage regulator supports input voltages from 4V to 24V, making it suitable for industrial and automotive applications, while also providing strong electromagnetic interference (EMC) resistance and high reliability. The sensor incorporates dynamic offset cancellation and temperature compensation to minimize variations due to process, packaging, and thermal stress, ensuring stable sensitivity. It features an integrated voltage regulator, Hall array, amplifier, low-pass filter, hysteresis comparator, and output current control. The two-wire current output interface simplifies wiring and facilitates open/short circuit diagnostics. Available in 3-pin TO-92S (UA) and 3-pin SOT23-3L (SO) packages, both with 100% lead-free matte tin-plated leads.

Product Attributes

Brand: HuaXin Tech
Package Types: TO-92S (UA), SOT23-3L (SO)
Lead Finish: 100% Lead-free matte tin-plated

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typical	Max	Unit	Notes
Thermal Resistance (Junction to Ambient)	Rja	UA package, single-layer PCB			200	/W	(1)
Thermal Resistance (Junction to Ambient)	Rja	SO package, single-layer PCB			300	/W	(1)
Power Supply Voltage Rating	VDD	Rs200, < 5 min	-28		60	V
Operating Temperature	TA		-40		150
Maximum Junction Temperature	TJ	168 hours	-55		165
Storage Temperature	TSTG		-65		175
ESD Protection (HBM)	VESD_HBM	Human Body Model (HBM) per AEC-Q100-002	-8		8	KV	ESD-HBM test uses bare die.
Operating Voltage	VDD	TJ < TJ(Max.)	4		24	V	(2)
Reverse Voltage	VDDR	IDD < -10mA, TA=25	-28		-	V
High Undervoltage Lockout	UVLOH	B > BOP+2.0mT, VDD Rising From 1.5V		1.95		V
Low Undervoltage Lockout	UVLOL	B > BOP+2.0mT, VDD Decreasing From 2.5V		1.75		V
Undervoltage Lockout Hysteresis	UVLOHYS	UVLOH - UVLOL		250		mV
Low Operating Current	IDDL	VDD=4 to 24 V, TA=25		4		mA
High Operating Current	IDDH	VDD=4 to 24 V, TA=25		26		mA
Power-Up Output Valid Time	ton	VDD > 2.5V		50	60	s
Output Delay Time	td	B=BRP to BOP		15	40	s
Bandwidth	fBW		-	-	20	KHz
Switching Point (BOP)	BOP	HXS21CSO, TA=-40to 125	+6.0	+8.0	+10.0	mT(1)	(1)
Switching Point (BOP)	BOP	HXS21CUA, TA=-40to 125	-10.0	-8.0	-6.0	mT(1)	(1)
Release Point (BRP)	BRP	HXS21CSO, TA=-40to 125	-10.0	-8.0(2)	-6.0	mT(1)	(2)
Release Point (BRP)	BRP	HXS21CUA, TA=-40to 125	6.0	8.0	10.0	mT(1)	(1)
Hysteresis (BHYS)	BHYS	TA=-40to 125	12.0	16.0	20.0	mT
Hysteresis (BHYS)	BHYS	TA=-40to 125	12.0	16.0	20.0	mT
Magnetic Symmetry (BO)	BO	(BOP+BRP)/2, HXS21CSO	-2.0	0	+2.0	mT
Magnetic Symmetry (BO)	BO	(BOP+BRP)/2, HXS21CUA	-2.0	0	+2.0	mT

Notes:
(1) Maximum operating voltage must meet power dissipation and junction temperature requirements, refer to thermal characteristics.
(2) Test value at TA=+25C, VDD = 12V is typical.
(1) 1mT=10Gs
(2) Magnetic flux density B, North pole magnetic field is negative, South pole magnetic field is positive.

2506041705_HUAXIN-S21C_C49023401.pdf

Quality Latched hall effect sensor HUAXIN S21C with two wire current output and open short circuit diagnostics for sale

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