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Micropower hall effect switch Cross chip CC6211ETO optimized for pda and instrumentation applications

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Micropower hall effect switch Cross chip CC6211ETO optimized for pda and instrumentation applications

Sample Frequency : 11Hz

Operation Points : 3.3mT

Operating Current : 3uA

Release Points : 2.1mT

Operating Temperature : -40℃~+85℃

Voltage - Supply : 2.5V~5.5V

Description : TO-92S Switches (Solid State) RoHS

Mfr. Part # : CC6211ETO

Model Number : CC6211ETO

Package : TO-92S

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Product Overview

The CC6211E is a micropower, ultra-sensitive, unipolar Hall effect switch designed for various sensing applications. It features advanced Bi-CMOS processing for optimized circuit structure, dynamic offset cancellation for improved consistency, and a miniaturized packaging process for high performance and market advantages. Its applications include instrumentation, PDAs, and laptops.

Product Attributes

Brand: CrossChip Microsystems
Product Series: crossMAG

Technical Specifications

Parameter	Symbol	Condition	Min.	Typ.	Max.	Unit
Electrical Parameters
Supply Voltage	VDD		2.5	-	5.5	V
Output High Voltage	VOH	IOUT(SOURCE) = 0.5mA	VDD-0.2	-	-	V
Output Low Voltage	VOL	IOUT(SINK) = 0.5mA	-	-	0.2	V
Average Current	IDD(AVG)	VOUT pin suspended	-	3	-	uA
Supply Current (Enabled)	IDD(EN)		-	1.2	-	mA
Supply Current (Disabled)	IDD(DIS)		-	3	-	uA
Output Source Current	IOUT(SOURCE)		-	-	0.5	mA
Output Sink Current	IOUT(SINK)		-	-	0.5	mA
Awake Time	TAWAKE		-	15	-	us
Period	TPERIOD		-	85	-	ms
Duty Cycle	D.C.		-	0.018	-	%
Magnetic Specifications
Operating Point	BOP	VDD=3.5V @ Ta=25C	26	33	40	Gs
Release Point	BRP	VDD=3.5V @ Ta=25C	14	21	28	Gs
Hysteresis	BHYS	VDD=3.5V @ Ta=25C	6	12	18	Gs
Absolute Maximum Ratings
Supply Voltage	VDD		-0.3	-	5.5	V
Magnetic Flux Density	B		-	-	unlimited	Gs
Junction Temperature	TA		-40	-	85	C
Storage Temperature	TS		-50	-	160	C
ESD (HBM)			-	-	2	kV
Moisture Sensitivity Level	MSL		-	3	-

2407171003_Cross-chip-CC6211ETO_C19724221.pdf

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