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BYD BSY2-1504IOV2 Current Sensor Offering High Accuracy and Easy Installation for Electronic Systems

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BYD BSY2-1504IOV2 Current Sensor Offering High Accuracy and Easy Installation for Electronic Systems

working temperature : -40℃~+85℃

Current Range : ±450A

Voltage - Supply : ±15V

Band Width : 50kHz

Bidirectional Current Detection : Support

Description : ±450A Current Sensors RoHS

Mfr. Part # : BSY2-150/4IOV2

Model Number : BSY2-150/4IOV2

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Product Overview

The BYD BSY2-IOV2-M is a Hall effect current sensor designed for electronic measurement of DC, AC, pulsed, and mixed currents. It provides galvanic isolation between the primary and secondary circuits, featuring a compact design for PCB mounting, low power consumption, and an extended measuring range. This sensor offers easy installation, excellent accuracy, no insertion losses, and high immunity to external interference, making it a cost-effective solution for a wide range of current ratings.

Product Attributes

Brand: BYD Microelectronics Co., Ltd.
Product Line: BSY2-IOV2-M
Certifications: UL 94-V0

Technical Specifications

Type	Primary Nominal Current (IPN) (A)	Primary Current Measuring Range (IPM) (A)	Supply Voltage (VC) (V)	Current Consumption (IC) (mA)	Output Voltage (VOUT)	Overload Capability (IPC)	Isolation Resistance (RIS) (M)	Output Internal Resistance (ROUT) ()	Load Resistance (RL) (K)	Isolation Test Voltage (Vd) (KV)	Accuracy (X) (%)	Electrical Offset Voltage (VOE) (mV)	Hysteresis Offset Voltage (VOH) (mV)	Temp. Coeff. of VOE (TCVOE) (mV/K)	Temp. Coeff. of VOUT (TCVOUT) (%/K)	Response Time (tr) (S)	di/dt (A/S)	Frequency Bandwidth (BW) (kHz)	Ambient Operating Temp. (TA) (C)	Ambient Storage Temp. (TS) (C)	Mass (g)
BSY2 50/4IOV2	50	150	15	15	4V 40 @ IPN, RL = 10 k, TA = 25C	At 50* IPN	>1000 @ 500 VDC	100 approx	>1	3 @50Hz, 1 min	<1 @ IPN, TA = 25C (without offset)	<20 @ta = 25C	<20 @IP= 0; after an excursion of 1* IPN	<2 @BSY2 50--75IOV2-M	<0.1 @% of reading	<3 @ 90% of IPN step	>50	DC~50 @-3dB	-40.+85	-40.+105	approx 60
BSY2 -75/4IOV2	75	225	15	15	4V 40 @ IPN, RL = 10 k, TA = 25C	At 50* IPN	>1000 @ 500 VDC	100 approx	>1	3 @50Hz, 1 min	<1 @ IPN, TA = 25C (without offset)	<20 @ta = 25C	<20 @IP= 0; after an excursion of 1* IPN	<2 @BSY2 50--75IOV2-M	<0.1 @% of reading	<3 @ 90% of IPN step	>50	DC~50 @-3dB	-40.+85	-40.+105	approx 60
BSY2-100/4IOV2	100	300	15	15	4V 40 @ IPN, RL = 10 k, TA = 25C	At 50* IPN	>1000 @ 500 VDC	100 approx	>1	3 @50Hz, 1 min	<1 @ IPN, TA = 25C (without offset)	<20 @ta = 25C	<20 @IP= 0; after an excursion of 1* IPN	<1 @BSY2 100--600IOV2-M	<0.1 @% of reading	<3 @ 90% of IPN step	>50	DC~50 @-3dB	-40.+85	-40.+105	approx 60
BSY2-150/4IOV2	150	450	15	15	4V 40 @ IPN, RL = 10 k, TA = 25C	At 50* IPN	>1000 @ 500 VDC	100 approx	>1	3 @50Hz, 1 min	<1 @ IPN, TA = 25C (without offset)	<20 @ta = 25C	<20 @IP= 0; after an excursion of 1* IPN	<1 @BSY2 100--600IOV2-M	<0.1 @% of reading	<3 @ 90% of IPN step	>50	DC~50 @-3dB	-40.+85	-40.+105	approx 60
BSY2-200/4IOV2	200	600	15	15	4V 40 @ IPN, RL = 10 k, TA = 25C	At 50* IPN	>1000 @ 500 VDC	100 approx	>1	3 @50Hz, 1 min	<1 @ IPN, TA = 25C (without offset)	<20 @ta = 25C	<20 @IP= 0; after an excursion of 1* IPN	<1 @BSY2 100--600IOV2-M	<0.1 @% of reading	<3 @ 90% of IPN step	>50	DC~50 @-3dB	-40.+85	-40.+105	approx 60
BSY2-300/4IOV2	300	900	15	15	4V 40 @ IPN, RL = 10 k, TA = 25C	At 50* IPN	>1000 @ 500 VDC	100 approx	>1	3 @50Hz, 1 min	<1 @ IPN, TA = 25C (without offset)	<20 @ta = 25C	<20 @IP= 0; after an excursion of 1* IPN	<1 @BSY2 100--600IOV2-M	<0.1 @% of reading	<3 @ 90% of IPN step	>50	DC~50 @-3dB	-40.+85	-40.+105	approx 60
BSY2-400/4IOV2	400	900	15	15	4V 40 @ IPN, RL = 10 k, TA = 25C	At 50* IPN	>1000 @ 500 VDC	100 approx	>1	3 @50Hz, 1 min	<1 @ IPN, TA = 25C (without offset)	<20 @ta = 25C	<20 @IP= 0; after an excursion of 1* IPN	<1 @BSY2 100--600IOV2-M	<0.1 @% of reading	<3 @ 90% of IPN step	>50	DC~50 @-3dB	-40.+85	-40.+105	approx 60
BSY2-500/4IOV2	500	900	15	15	4V 40 @ IPN, RL = 10 k, TA = 25C	At 50* IPN	>1000 @ 500 VDC	100 approx	>1	3 @50Hz, 1 min	<1 @ IPN, TA = 25C (without offset)	<20 @ta = 25C	<20 @IP= 0; after an excursion of 1* IPN	<1 @BSY2 100--600IOV2-M	<0.1 @% of reading	<3 @ 90% of IPN step	>50	DC~50 @-3dB	-40.+85	-40.+105	approx 60
BSY2-600/4IOV2	600	900	15	15	4V 40 @ IPN, RL = 10 k, TA = 25C	At 50* IPN	>1000 @ 500 VDC	100 approx	>1	3 @50Hz, 1 min	<1 @ IPN, TA = 25C (without offset)	<20 @ta = 25C	<20 @IP= 0; after an excursion of 1* IPN	<1 @BSY2 100--600IOV2-M	<0.1 @% of reading	<3 @ 90% of IPN step	>50	DC~50 @-3dB	-40.+85	-40.+105	approx 60

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