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Isolated current sensor CHIPSENSE AN3V 32 PB30 with compact height and wide current measurement range

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Isolated current sensor CHIPSENSE AN3V 32 PB30 with compact height and wide current measurement range

working temperature : -40℃~+105℃

Current Range : ±80A

Voltage - Supply : 3.3V

Current Terminal Resistance : 0.21mΩ

Band Width : 250kHz

Response Time (tr) : 2.5us

Sensitivity : 14.375mV/A

Bidirectional Current Detection : Support

Description : ±80A 14.375mV/A Through Hole Current Sensors RoHS

Mfr. Part # : AN3V 32 PB30

Model Number : AN3V 32 PB30

Package : Through Hole

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AN3V PB30 Series Current Sensors

The AN3V PB30 series are open-loop Hall effect current sensors designed for measuring DC, AC, and pulse currents. They feature isolation between the primary and secondary sides, no insertion loss, and a compact design with a height of 8.7mm. These sensors are suitable for various industrial applications, including variable frequency drives, servo drivers, DC motor drivers, UPS, module power supplies, SMPS, busbars, and MPPT systems. They comply with IEC 60664-1:2020, IEC 61800-5-1:2022, and IEC 62109-1:2010 standards.

Product Attributes

Brand: (Chipsensor)
Principle: Hall effect, open-loop
Isolation: Primary and secondary sides
Materials: Compliant with UL 94-V0
Certifications: IEC 60664-1, IEC 61800-5-1, IEC 62109-1

Technical Specifications

Product Model	Primary Rated Current (IPN)	Primary Current Measurement Range (IPM)	Supply Voltage (VC)	Current Consumption (IC)	Output Bandwidth (-3dB) (BW)	Output Noise (Vno)	Accuracy @ IPN	Accuracy @ IPN (TA=-40~105)
AN3V 10 PB30	-10 to 10 A	-25 to 25 A	3.135 - 3.3 - 3.465 V	6.5 - 11 mA	250 kHz	4.8 mVRMS	-1 to 1 % of IPN	-2.5 to 2.5 % of IPN
AN3V 16 PB30	-16 to 16 A	-40 to 40 A	3.135 - 3.3 - 3.465 V	6.5 - 11 mA	250 kHz	3 mVRMS	-1 to 1 % of IPN	-2.5 to 2.5 % of IPN
AN3V 20 PB30	-20 to 20 A	-50 to 50 A	3.135 - 3.3 - 3.465 V	6.5 - 11 mA	250 kHz	2 mVRMS	-1 to 1 % of IPN	-2.5 to 2.5 % of IPN
AN3V 32 PB30	-32 to 32 A	-80 to 80 A	3.135 - 3.3 - 3.465 V	6.5 - 11 mA	250 kHz	2 mVRMS	-1 to 1 % of IPN	-2.5 to 2.5 % of IPN
AN3V 40 PB30	-40 to 40 A	-100 to 100 A	3.135 - 3.3 - 3.465 V	6.5 - 11 mA	250 kHz	1.5 mVRMS	-1 to 1 % of IPN	-2.5 to 2.5 % of IPN
AN3V 50 PB30	-50 to 50 A	-125 to 125 A	3.135 - 3.3 - 3.465 V	6.5 - 11 mA	250 kHz	1.3 mVRMS	-1 to 1 % of IPN	-2.5 to 2.5 % of IPN

Environmental and Structural Characteristics

Parameter	Symbol	Unit	Min	Typical	Max	Notes
Operating Temperature	TA		-40		105
Storage Temperature	TS		-40		105
Weight	m	g		3.35
Dielectric Strength Test (RMS @ 50Hz, 1min)	Vd	kV		4.3		Refer to IEC 60664-1
Impulse Withstand Voltage (1.2/50s)	VW	kV		8		Refer to IEC 60664-1
Creepage Distance (Primary and Secondary)	dCp	mm	>8
Clearance Distance (Primary and Secondary)	dCI	mm	>8
Housing Material	-	-		UL94-V0

2506121200_CHIPSENSE-AN3V-32-PB30_C49164849.pdf

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