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isolated current sensor CHIPSENSE AN3V 40 PB50 suitable for switching mode power supplies and mppt systems

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isolated current sensor CHIPSENSE AN3V 40 PB50 suitable for switching mode power supplies and mppt systems

Standby Current : -

working temperature : -40℃~+105℃

Current Range : -100A~+100A

Voltage - Supply : 5V

Current Terminal Resistance : 0.21mΩ

Band Width : 250kHz

Response Time (tr) : 2.5us

Sensitivity : 20mV/A

Bidirectional Current Detection : Support

Description : -100A~+100A 20mV/A Through Hole Current Sensors RoHS

Mfr. Part # : AN3V 40 PB50

Model Number : AN3V 40 PB50

Package : Through Hole

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AN3V PB50 Series Current Sensor

The AN3V PB50 series are open-loop current sensors based on the Hall effect, designed for measuring DC, AC, and pulse currents. They feature isolation between the primary and secondary sides, with materials compliant to UL 94-V0. These sensors offer no insertion loss and operate with a +5V supply voltage, boasting a height of 8.7mm. They adhere to international standards including IEC 60664-1:2020, IEC 61800-5-1:2022, IEC 62109-1:2010, and UL 508.

Applications: AC variable frequency drives, servo drives, DC motor drives, uninterruptible power supplies (UPS), modular power supplies, switching mode power supplies (SMPS), busbars, and MPPT.

Product Attributes

Brand: Chipsensor ()
Certifications: UL 94-V0, IEC 60664-1:2020, IEC 61800-5-1:2022, IEC 62109-1:2010, UL 508
Material: Primary current busbar: Tin-plated copper
Insulation: Primary and secondary sides are insulated.

Technical Specifications

Model	Primary Rated Current (RMS) (IPN)	Primary Current Measurement Range (IPM)	Supply Voltage (VC)	Current Consumption (IC)	Zero Point Output Voltage (VOE)	Accuracy @ IPN	Temperature Drift of Zero Point Output Voltage (TCVOE)	Gain Error Temperature Drift (TCG)	Non-linearity Error (L) % of IPN	Tracking Time @ 90% of IPN (tr)	Output Bandwidth (-3dB) (BW)	Output Noise (Vno)
	Unit	A	A	V	mA	mV	% of IPN	mV	%	%	s	kHz	mVRMS
AN3V 10 PB50	-10 to 10	-25 to 25	4.5 to 5.5	6.5 to 11	-5 to 5	-1	0.4 to 6	-1.6 to 1.6	-0.5	2.5	250	9
AN3V 16 PB50	-16 to 16	-40 to 40	4.5 to 5.5	6.5 to 11	-5 to 5	-1	0.4 to 6	-1.6 to 1.6	-0.5	2.5	250	6
AN3V 20 PB50	-20 to 20	-50 to 50	4.5 to 5.5	6.5 to 11	-5 to 5	-1	0.4 to 6	-1.6 to 1.6	-0.5	2.5	250	5
AN3V 32 PB50	-32 to 32	-80 to 80	4.5 to 5.5	6.5 to 11	-5 to 5	-1	0.4 to 6	-1.6 to 1.6	-0.5	2.5	250	2
AN3V 40 PB50	-40 to 40	-100 to 100	4.5 to 5.5	6.5 to 11	-5 to 5	-1	0.4 to 6	-1.6 to 1.6	-0.5	2.5	250	2.7
AN3V 50 PB50	-50 to 50	-125 to 125	4.5 to 5.5	6.5 to 11	-5 to 5	-1	0.4 to 6	-1.6 to 1.6	-0.5	2.5	250	1.7
AN3V 80 PB50	-80 to 80	-200 to 200	4.5 to 5.5	6.5 to 11	-5 to 5	-1	0.4 to 6	-1.6 to 1.6	-0.5	2.5	250	1.4
AN3V 100 PB50	-100 to 100	-250 to 250	4.5 to 5.5	6.5 to 11	-5 to 5	-1	0.4 to 6	-1.6 to 1.6	-0.5	2.5	250	1.1
AN3V 120 PB50	-120 to 120	-300 to 300	4.5 to 5.5	6.5 to 11	-5 to 5	-1	0.4 to 6	-1.6 to 1.6	-0.5	2.5	250	0.9

Maximum Limits

Parameter	Symbol	Unit	Value
Supply Voltage	VC	V	6.5
Primary Busbar Temperature	TB		120
Electrostatic Discharge-HBM Mode	VESD	V	8000

Environmental and Structural Characteristics

Parameter	Symbol	Unit	Min	Typical	Max	Remarks
Operating Temperature	TA		-40		105
Storage Temperature	TS		-40		105
Mass	m	g		3.35

Insulation Characteristics

Parameter	Symbol	Unit	Value	Remarks
AC Isolation Withstand Voltage (RMS @ 50Hz, 1min)	Vd	kV	4.3	Refer to IEC 60664-1
Impulse Withstand Voltage 1.2/50s	VW	kV	8	Refer to IEC 60664-1
Creepage Distance (Between Primary and Secondary)	dCp	mm	>8
Clearance Distance (Between Primary and Secondary)	dCI	mm	>8
Housing Material	-	-	UL94-V0

2407171028_CHIPSENSE-AN3V-40-PB50_C25011973.pdf

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