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Small sized high speed current sensor AKM CQ2235 using quantum well InAs Hall effect sensor technology

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Small sized high speed current sensor AKM CQ2235 using quantum well InAs Hall effect sensor technology

working temperature : -40℃~+150℃

Current Range : 85A

Voltage - Supply : 2.7V~3.63V

Sensitivity : 15.5mV/A

Description : 85A 15.5mV/A Through Hole Current Sensors RoHS

Mfr. Part # : CQ2235

Model Number : CQ2235

Package : Through Hole

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Product Overview

The CQ-2235 is a high-speed, small-sized, open-type current sensor that utilizes a Quantum Well ultra-thin film InAs Hall sensor. It provides an analog voltage output proportional to AC/DC current, enabling high-accuracy and high-speed current sensing. The integrated AI-Shell package, combining the Hall sensor, magnetic core, and primary conductor, ensures space-saving design and high reliability. It is suitable for applications requiring electrical isolation between the primary conductor and the sensor signal, operating on a 3.3V single supply.

Product Attributes

Brand: Asahi Kasei Microdevices (AKM)
Sensor Type: Hall Effect
Package Type: AI-Shell
Material: Quantum well ultra-thin film InAs (Indium Arsenide) for Hall sensor; Halogen-free
Certifications: IEC/UL 60950-1, UL 508, CSA C22.2 No. 14 (IEC 62109 certification pending)
RoHS Compliant: Yes

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units	Notes
Maximum Primary Current (RMS)	IRMSmax		-50		50	A
Current Consumption	IDD	No loads		6.2	9.6	mA
Sensitivity	Vh	See Figure 5		15.5		mV/A	Note 1
Offset Voltage	Vof	IIN = 0A		1.650		V	Note 1
Linear Sensing Range	INS		-85		85	A
Linearity Error		See Figure 5, Figure 6	-1		1	%F.S.	Note 1
Rise Response Time	tr	CL = 100pF, See Figure 9		1		s
Fall Response Time	tf	CL = 100pF, See Figure 9		1		s
Bandwidth	fT	-3dB, CL = 100pF			300	kHz
Output Noise	VNrms	100Hz to 4MHz		1.2		mVrms	Note 2
Temperature Drift of Sensitivity	Vh-dmax	Ta = 40 to 110C, See Figure 7		0.4		%
Temperature Drift of Offset Voltage	Vof-dmax	Ta = 40 to 110C, IIN = 0A, See Figure 8		2.5		mV
Ratiometric Error of Sensitivity	Vh-R	VDD = 2.97V to 3.63V	-1		1	%	Note 2
Ratiometric Error of Offset Voltage	Vof-R	VDD = 2.97V to 3.63V, IIN = 0A	-0.6		0.6	%F.S.	Note 2
Total Accuracy	ETO	Ta = 40 to 110C, 54A IIN 54A		1.3		%F.S.	Note 3
Primary Conductor Resistance	R1			100
Isolation Voltage	VINS	AC 50/60Hz, 60sec		3		kV	Note 2
Isolation Resistance	RINS	DC 1kV		500		M	Note 2
Clearance Distance	dCL	between the primary and the secondary		13.3		mm	Note 2
Creepage Distance	dCP	between the primary and the secondary		13.3		mm	Note 2
Supply Voltage	VDD	Recommended Operating Conditions	2.7	3.3	3.63	V
Analog Output Current	IOUT	Recommended Operating Conditions	-0.5		0.5	mA	VOUT pin
Output Load Capacitance	CL	Recommended Operating Conditions			100	pF	VOUT pin
Operating Ambient Temperature	Ta	Recommended Operating Conditions	-40		110	C	See Figure 4

Notes:
Note 1: These parameters can drift by the values in 14. Reliability Tests after the reflow and over the lifetime of this product.
Note 2: These parameters are guaranteed by design.
Note 3: Total accuracy ETO is calculated by the equation below. ETO = |100 (Vh_meas 15.5) / 15.5| + |100 (Vof_meas Vof_meas_35) / (15.5 85 2)| + |meas|

2411272100_AKM-CQ2235_C1574473.pdf

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