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Quantum well ultra thin film Hall sensor based current sensor AKM CQ209A with analog voltage output

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Quantum well ultra thin film Hall sensor based current sensor AKM CQ209A with analog voltage output

Voltage - Supply : 4.5V~5.5V

Description : SMD Current Sensors RoHS

Mfr. Part # : CQ209A

Model Number : CQ209A

Package : SMD

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Product Overview

The CQ-209A is an open-type current sensor utilizing a quantum well ultra-thin film InAs Hall sensor for high-accuracy and high-speed AC/DC current sensing. Its integrated AI-Shell package, containing the Hall sensor, magnetic core, and primary conductor, offers a space-saving and highly reliable solution. The sensor provides an analog voltage output proportional to the measured current, featuring electrical isolation between the primary conductor and the sensor signal, 5V single supply operation, and ratiometric output. It is designed for low variation and low temperature drift in sensitivity and offset voltage, with low noise output and a fast response time, all within a small-sized surface mount package that is halogen-free.

Product Attributes

Brand: Asahi Kasei Microdevices (AKM)
Sensor Type: Hall sensor
Package Type: AI-Shell, Small-sized surface mount
Material: Quantum well ultra-thin film InAs (Indium Arsenide) for Hall sensor; Tin (100%) plating for terminals
Certifications: RoHS compliant, Halogen free
Operation: Bidirectional

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units	Notes
Model	CQ-209A						MS1265-E-05 2013/06
Supply Voltage	VDD		4.5	5.0	5.5	V	Single supply operation
Maximum Primary Current (RMS)	IRMSmax	Ta=40~90C		-20	20	A
Current Consumption	IDD	No Loads		9		mA
Sensitivity	Vh	Ta=25C, VDD=5V	64.7	66.0	67.3	mV/A	*
Offset Voltage	Vof	IIN=0A, Ta=25C, VDD=5V	2.408	2.500	2.592	V	*
Linear Sensing Range	INS		-31.8		31.8	A
Linearity Error			-1		1	%F.S.	*
Rise Response Time	tr	IIN 90% VOUT 90%, CL=100pF		1		s	typ.
Fall Response Time	tf	IIN 10% VOUT 10%, CL=100pF		1		s	typ.
Bandwidth	fT	-3dB, CL=100pF			400	kHz
Output Noise	VNrms				2.1	mVrms	max.
Maximum Temperature Drift of Sensitivity	Vh-dmax	Ta=35~90C (variation ratio to Vh(Ta=35C))	1			%
Maximum Temperature Drift of Sensitivity	Vh-dmax	Ta=40~35C (variation ratio to Vh(Ta=35C))	2			%
Maximum Temperature Drift of Offset voltage	Vof-dmax	Ta=40~90C, IIN=0A (variation from Vof(Ta=35C))			22	mV
Ratiometricity Error of Sensitivity	Vh-R	VDD=4.5V~5.5V	-1		1	%	**
Ratiometricity Error of Offset Voltage	Vof-R	VDD=4.5V~5.5V, IIN=0A	-1		1	%	**
Primary Conductor Resistance	R1			340
Isolation Voltage	VINS	AC 50/60Hz, 60s			2.5	kV	**
Isolation Resistance	RINS	DC 1kV			500	M	**
Operating Ambient Temperature	Ta		-40		90	C
Storage Temperature	Tstg		-40		125	C

* These parameters can drift by the values described in Reliability Tests section over the lifetime of the product.
** These characteristics are guaranteed by design.

2411272252_AKM-CQ209A_C1574495.pdf

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