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Accurate electronic current sensor LEM HXS50-NP with Hall effect technology and multirange capability

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Accurate electronic current sensor LEM HXS50-NP with Hall effect technology and multirange capability

Description : Through Hole Current Sensors RoHS

Mfr. Part # : HXS50-NP

Model Number : HXS50-NP

Package : Through Hole

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Product Overview

The LEM HXS 50-NP is a current transducer designed for the electronic measurement of DC, AC, and pulsed currents. It provides galvanic separation between the primary and secondary circuits, making it ideal for various industrial applications. Key features include a Hall effect measuring principle, multirange capability via PCB layout, low profile, single 5V power supply, and UL recognized insulating plastic case.

Product Attributes

Brand: LEM
Product Name: HXS 50-NP
Origin: Switzerland (implied by LEM International SA and Meyrin address)
Material: Insulating plastic case recognized according to UL 94-V0.
Certifications: UL recognized, EN 50178, EC 61010-1, UL 508

Technical Specifications

Parameter	Value	Unit	Notes
Electrical Data
Primary nominal RMS current (IP N)	50	A	For HXS 50-NP model
Primary current, measuring range (IP M)	±150	A
Nominal sensitivity (SN)	0.625	V/A
Output voltage (Uout) @ IP N	±(0.625·IP/ IP N)	V	Analog output
Reference voltage (Uref)	2.5 ±0.025	V	Can be overdriven with external voltage (1.5 - 2.8 V)
Output impedance (Rout)	typ. 200	Ω
Load impedance (RL)	200 kΩ
Load resistance	2 kΩ
Output internal resistance	< 5	Ω
Load capacitance (CL)	4.7	nF	(±20 %)
Supply voltage (UC)	5 ±5 %	V	Maximum supply voltage (not operating) < 6.5 V
Current consumption @ UC = 5 V	19	mA
Accuracy
Error @ IP N, TA = 25 °C	±1	%	Excluding offset and magnetic offset voltage
Linearity error (0 ... IP N)	±0.5	%
Linearity error (0 ... 3 × IP N)	±1	%
Temperature coefficient of UO E (+25 ... 105 °C)	±0.4	mV/K
Temperature coefficient of UO E (−40 ... +25 °C)	±0.525	mV/K
Temperature coefficient of Uref (+25 ... 105 °C)	±0.01	%/K
Temperature coefficient of Uref (−40 ... +25 °C)	±0.015	%/K
Temperature coefficient of UO E /Uref	±0.15	mV/K
Temperature coefficient of S	±0.05	% of reading/K
Electrical offset voltage @ IP = 0, TA = 25 °C	±0.0125	V
Magnetic offset voltage @ IP = 0 after an overload of 3 × IPN	±1	%
Dynamic Performance Data
Delay time to 10 % of final output value (tD 10) for IP N step	< 3	µs
Delay time to 90 % of final output value (tD 90) for IP N step	< 5	µs	For di/dt = 50 A/µs
Output voltage noise (Uno) (DC ... 10 kHz)	< 20	mVpp
Output voltage noise (Uno) (DC ... 1 MHz)	< 40	mVpp
Frequency bandwidth (BW) (3 dB)	DC ... 50	kHz	Small signal only
General Data
Ambient operating temperature (TA)	40 ... +105	°C	UL recognized until +85 °C
Ambient storage temperature (TA st)	40 ... +105	°C
Mass	10	g
Insulation Coordination
RMS voltage for AC insulation test (Ud)	3.5	kV	50 Hz, 1 min
Creepage distance (dCp)	7.48	mm
Clearance (dCI)	6.6	mm
Comparative tracking index (CTI)	> 600		(group I)
Rated insulation voltage (EN 50178)	600	V	Basic insulation
Rated insulation voltage (EN 50178)	300	V	Reinforced insulation
Nominal voltage (IEC 61010-1)	600	V	Basic insulation
Nominal voltage (IEC 61010-1)	150	V	Reinforced insulation
Mechanical Characteristics
Primary resistance (RP)	0.05	mΩ	For 1 primary turn
Primary insertion inductance (LP)	0.025	µH	For 1 primary turn

2411261433_LEM-HXS50-NP_C454698.pdf

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