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Current measurement solution LEM LTS6 NP with high immunity to external interference and no insertion losses

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Current measurement solution LEM LTS6 NP with high immunity to external interference and no insertion losses

working temperature : -40℃~+85℃

Current Range : 6A

Voltage - Supply : 5V

Sensitivity : 104.16mV/A

Description : 6A 104.16mV/A Through Hole Current Sensors RoHS

Mfr. Part # : LTS6-NP

Model Number : LTS6-NP

Package : Through Hole

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Product Overview

The LEM LTS 6-NP is a closed-loop current transducer utilizing Hall effect technology for the electronic measurement of DC, AC, pulsed, and mixed currents. It provides galvanic isolation between the primary and secondary circuits. Key advantages include excellent accuracy, very good linearity, low temperature drift, optimized response time, wide frequency bandwidth, no insertion losses, and high immunity to external interference. This transducer is suitable for various industrial applications such as AC variable speed drives, static converters, battery-supplied applications, and power supplies.

Product Attributes

Brand: LEM
Certifications: EN 50178: 1997, IEC 60950-1: 2001, UL 94-V0
Material: Isolated plastic case

Technical Specifications

Parameter	Value	Unit	Notes
Electrical Data
Primary nominal current rms (IPN)	6	A
Primary current, measuring range (IPM)	0 .. 19.2	A
Overload capability (P)	250	A
Output voltage (Analog) @ IP	2.5 (0.625IP/IPN)	V
Output voltage @ IP = 0	2.5	V	1)
Sensitivity (G)	104.16	mV/A
Number of secondary turns (NS)	2000	0.1 %
Load resistance (RL)	2	kW
Internal measuring resistance (RIM)	208.33	W	0.5 %
Temperature coefficient of RIM (TCR IM)	< 50	ppm/K
Supply voltage (VC)	5	V	5 %
Current consumption @ VC = 5 V	Typ 28+IS	mA	2)
Accuracy @ IPN, TA = 25C	0.2	%
Accuracy - Dynamic performance data with RIM @ IPN, TA = 25C	0.7	%
Linearity error (L)	< 0.1	%	Typ
Temperature coefficient of VOUT @ IP= 0	80 / 200	ppm/K	- 10C .. + 85C / - 40C .. - 10C
Temperature coefficient of G (TCG)	50	ppm/K	3) - 40C .. + 85C
Magnetic offset voltage @ IP = 0, after an overload of 3 x IPN	0.5	mV
Magnetic offset voltage @ IP = 0, after an overload of 5 x IPN	2.0	mV
Magnetic offset voltage @ IP = 0, after an overload of 10 x IPN	2.0	mV
Reaction time @ 10 % of IPN (tra)	< 100	ns
Response time to 90 % of IPN step (tr)	< 400	ns
di/dt accurately followed	> 15	A/s
Frequency bandwidth (BW) (0 .. - 0.5 dB)	DC .. 100	kHz
Frequency bandwidth (BW) (DC .. 200 kHz)			(- 0.5.. 1 dB)
General Data
Ambient operating temperature (TA)	- 40 .. + 85	C
Ambient storage temperature (TS)	- 40.. + 100	C
Mass (m)	10	g
Isolation Characteristics
Rms voltage for AC isolation test (Vd), 50 Hz, 1 min	3	kV
Impulse withstand voltage (Vw) 1.2/50 s	> 8	kV
Rms voltage for partial discharge extinction (Ve) @ 10pC	> 1.5	kV
Creepage distance (dCp)	15.5	mm	1) On housing
Clearance distance (dCI)	6.35	mm	2) On PCB with soldering pattern UTEC93-703
Comparative Tracking Index (CTI) (group IIIa)	175
Dimensions and Connections
Primary nominal current rms (IPN)	6	A
Nominal output voltage VOUT [ V ]	2.5 0.625	V
Primary resistance RP	0.18 / 0.81 / 1.62	mW	For 1, 2, 3 primary turns respectively
Primary insertion inductance LP	0.013 / 0.05 / 0.12	H	For 1, 2, 3 primary turns respectively

2411271944_LEM-LTS6-NP_C454686.pdf

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