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Hall Effect Based Automotive Current Sensor LEM HAH1DR200-S with Excellent Linearity and Low Thermal Offset

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Hall Effect Based Automotive Current Sensor LEM HAH1DR200-S with Excellent Linearity and Low Thermal Offset

working temperature : -40℃~+125℃

Current Range : 200A

Voltage - Supply : 4.75V~5.25V

Sensitivity : 10mV/A

Description : 200A 10mV/A Current Sensors RoHS

Mfr. Part # : HAH1DR200-S

Model Number : HAH1DR200-S

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HAH1DR 200-S Automotive Current Transducer

The HAH1DR family of open-loop current transducers utilizes Hall effect technology for the electronic measurement of DC, AC, or pulsed currents in high-power automotive applications. They provide galvanic separation between the primary and secondary circuits, offering various current measuring ranges within the same housing. Key advantages include excellent accuracy, very good linearity, low thermal offset and sensitivity drift, wide frequency bandwidth, and no insertion losses.

Product Attributes

Brand: LEM
Technology: Open Loop Hall Effect
Material (Case): PBT GF 30
Material (Magnetic Core): Iron silicon alloy
Electrical Terminal Coating: Brass tin plated
Connector Type: TYCO 1473672-1

Technical Specifications

Parameter	Symbol	Unit	Specification	Conditions	Min	Typical	Max
Absolute Maximum Ratings (Not Operating)
Primary current peak	Pmax	A	1)				7
Supply continuous over voltage	UC	V			- 0.5		1
Reverse voltage		V	2)	1 min @ TA = 25 C			- 0.5
Ambient storage temperature	TS	C			- 55		125
Electrostatic discharge voltage	UESD	kV		JESD 22-A114-B (HBM)		2
Continuous output current	Iout	mA			- 10		10
RMS voltage for AC insulation test, 50 Hz, 1 min	Ud	kV		50 Hz, 1 min		2
Continuous output over voltage (Analog)	Vout	V			- 0.5	UC + 0.5
Insulation resistance	RIS	M		500 V - ISO 16750-2	500
Output Short circuit duration	tc	minutes					2
Operating Characteristics in Nominal Range (IPN)
Primary current	IPn	A					200
Supply voltage	UC	V			4.75	5	5.25
Ambient operating temperature	TA	C		Connector limited 105 C	- 40		125
Sensitivity	G	mV/A	3)	@ UC= 5 V		10
Current consumption	IC	mA		@ UC= 5 V, - 40 C < TA< 125 C		15	20
Load resistance	RL	K			10
Capacitive loading	CL	nF				1	100
Output internal resistance	Rout			DC to 1 kHz		10
Ratiometricity error	r	%					0.5
Sensitivity error	G	%		@ TA= 25 C, @ I = IP	- 1	0.5	1
Electrical offset current	IOE	A		@ TA= 25 C, @ UC= 5 V			0.6
Magnetic offset current	IOM	A		@ TA = 25 C, @ UC= 5 V, after IP			0.9
Global offset current	IO	A		@ TA = 25 C	- 1.5		1.5
Average temperature coefficient of VOE	TCIOEAV	mV/C		@ - 40 C < TA< 125 C	- 0.08	0.03	0.08
Average temperature coefficient of G	TCGAV	%/C		@ - 40 C < TA< 125 C	- 0.035	0.02	0.035
Linearity error	L	%		@ UC = 5 V, @ TA= 25 C, @ I= IP	- 1		1
Step response time to 90 %	tr	s		@ di/dt = 100 A/s		6	10
Frequency bandwidth	BW	kHz	4)	@ - 3 dB		30
Output clamping voltage minimum	VSZ	V		@ UC = 5 V, @ TA= 25 C		0.1
Output clamping voltage maximum		V		@ UC = 5 V, @ TA= 25 C			4.9
Output voltage noise peak-peak	Vno p-p	mV		DC to 1 kHz			22

Notes:
1) Busbar temperature must be below 150 C
2) Transducer not protected against reverse polarity
3) The output voltage Vout is fully ratiometric: The offset and sensitivity are dependent on the supply voltage UC relative to the following formula: Vout = (UC/5) (Vo + G IP )
4) Tested only with small signal only to avoid excessive heating of the magnetic core.

Automotive Applications

Battery monitoring
Starter Generators
Inverters
HEV application
EV application

2411261433_LEM-HAH1DR200-S_C454756.pdf

Quality Hall Effect Based Automotive Current Sensor LEM HAH1DR200-S with Excellent Linearity and Low Thermal Offset for sale

Hall Effect Based Automotive Current Sensor LEM HAH1DR200-S with Excellent Linearity and Low Thermal Offset Images

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