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High isolation current sensor NOVOSENSE NSM2012-20B5R-DSPR with 3000V isolation and low on resistance

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High isolation current sensor NOVOSENSE NSM2012-20B5R-DSPR with 3000V isolation and low on resistance

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working temperature : -40℃~+125℃

Current Range : ±20A

Voltage - Supply : 5V

Current Terminal Resistance : 1.2mΩ

Band Width : 400kHz

Response Time (tr) : 1.5us

Sensitivity : 100mV/A

Bidirectional Current Detection : Support

Description : ±20A 100mV/A SOIC-8 Current Sensors RoHS

Mfr. Part # : NSM2012-20B5R-DSPR

Model Number : NSM2012-20B5R-DSPR

Package : SOIC-8

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Product Overview

The NSM2012 is an integrated current sensor based on the Hall effect, offering high precision and common-mode magnetic field suppression with up to 3000V isolation. It features a very low 1.2m on-resistance, minimizing on-chip power loss. Leveraging NOVOSENSE's innovative isolation technology and signal conditioning, it accurately senses current flowing through its internal busbar while meeting high isolation requirements. The use of a differential Hall element provides strong immunity to external stray magnetic fields. The NSM2012 supports both proportional and fixed output modes. The fixed mode simplifies customer ADC differential sampling of Vref and Vout voltages, reducing common-mode interference. Compared to shunt resistor plus isolation amplifier solutions, the NSM2012 eliminates the need for primary-side power supply, simplifies PCB layout, and offers superior isolation voltage and lifetime stability. In high-side current detection applications, a single NSM2012 can achieve a 600Vpk working voltage and withstand 6kV surge voltage without additional protection components. Its precise internal temperature compensation algorithms and factory calibration ensure excellent accuracy across the entire operating temperature range, eliminating the need for secondary programming. It supports 3.3V/5V supply voltages (depending on the version).

Product Attributes

  • Brand: NOVOSENSE
  • Certifications: UL62368/EN62368
  • Packaging: SOIC8

Technical Specifications

ParameterSymbolMinTypMaxUnitComments
Common Characteristics
Operating VoltageVCC3.03.33.6V3.3V supply version
4.555.5V5V supply version
Operating CurrentICC1215mANo load, Vcc=5V
7.58mANo load, Vcc=3.3V
Primary On-ResistanceRP1.2mTA = 25
BandwidthBW400kHz-3dB, CL=1nF, TA = 25, 30A range measurement, R version
Response TimeTresponse1.5usVout=1V, TA = 25, CL=1nF, 30A range measurement, R version
Isolation Withstand VoltageVISO3000Vrms60s isolation withstand voltage, tested before shipment
Surge Withstand VoltageVsurge6kVAccording to IEC61000-4-5, 1.2us/50us waveform
CMTICMTI>100V/nsFailure criterion: output spike >100mV and duration >1us
Creepage DistanceCreepage4mmMinimum creepage distance
Clearance DistanceClearance4mmMinimum air gap distance
CTICTI>=600CTI I
NSM2012-30B3R-DSPR Characteristics (VCC = 3.3V)
Current Measurement RangeIpr-3030A
SensitivitySens44mV/AIprmin
Zero Current Output VoltageVQVOVCC/2VIpr=0A
Total Output Error-2.52.5%TA = 25~125
3.2%TA = -40~25
NSM2012-30B5R-DSPR Characteristics (VCC = 5V)
Current Measurement RangeIpr-3030A
SensitivitySens66.67mV/AIprmin
Zero Current Output VoltageVQVOVCC/2VIpr=0A
Total Output Error-1.21.2%TA = 25~125
1.8%TA = -40~25

2504101957_NOVOSENSE-NSM2012-20B5R-DSPR_C5137006.pdf


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