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Accurate Hall Effect Current Sensor LEM HO 25-P Providing Measurement for Industrial Current Monitoring

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Accurate Hall Effect Current Sensor LEM HO 25-P Providing Measurement for Industrial Current Monitoring

working temperature : -40℃~+105℃

Current Range : 25A

Voltage - Supply : 5V

Band Width : 250kHz

Response Time (tr) : 3.5us

Sensitivity : 32mV/A

Bidirectional Current Detection : Support

Description : 25A 32mV/A Through Hole,23x12mm Current Sensors RoHS

Mfr. Part # : HO 25-P

Model Number : HO 25-P

Package : Through Hole,23x12mm

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Product Overview

The LEM HO-P series are Hall effect current transducers designed for the electronic measurement of DC, AC, and pulsed currents. They provide galvanic separation between the primary and secondary circuits, offering a compact, space-saving solution with high insulation capability and fast response. These transducers are ideal for applications requiring precise current measurement with a single power supply and features like over-current detection.

Product Attributes

Brand: LEM
Product Series: HO-P
Certifications: EN 50178, IEC 61010-1, IEC 61326-1, UL 508, CSA C22.2 NO. 14-10
Application Domain: Industrial

Technical Specifications

Parameter	Symbol	Unit	IPN = 6 A	IPN = 10 A	IPN = 25 A	Comment
Primary nominal rms current	IPN	A	6	10	25
Primary current, measuring range	IPM	A	-20 to 20	-25 to 25	-62.5 to 62.5
Supply voltage	UC	V	4.5 to 5.5	4.5 to 5.5	4.5 to 5.5	+5 V single supply
Current consumption	IC	mA	19 to 25	19 to 25	19 to 25
Reference voltage	Vref	V	2.475 to 2.525	2.475 to 2.525	2.475 to 2.525	Internal reference
Output voltage range @ IPM	VOUT - Vref	V	-2 to 2	-2 to 2	-2 to 2
Electrical offset voltage	VOE	mV	-10 to 10	-10 to 10	-10 to 10
Theoretical sensitivity	Gth	mV/A	100 to 600	80 to 800		@ IPN, @ UC = 5 V
Sensitivity error	G	%	0.85	0.85		Factory adjustment
Linearity error (0 .. IPN)	L	% of IPN	0.5	0.5		@ UC = 5 V
Magnetic offset voltage @ IP = 0 after 2.5 IPN	VOM	mV	5	6
Reaction time @ 10 % of IPN	tra	s	2	2		di/dt = IPN/s
Response time @ 90 % of IPN	tr	s	3.5	3.5		di/dt = IPN/s
Frequency bandwidth (-3 dB)	BW	kHz	250	250
Output voltage noise (spectral density) (DC .. 100 kHz)	eno	Vrms/Hz	32.9			@ UC = 5 V
Output voltage noise (DC .. 20 MHz)	Vno	mVpp	80	50
Over-current detect		V	2.6 IPN to 3.2 IPN (peak value)	2.6 IPN to 3.2 IPN (peak value)	2.6 IPN to 3.2 IPN (peak value)
Accuracy @ IPN	X	% of IPN	1.35	1.35		G + L
Accuracy @ IPN @ TA = +85C	X	% of IPN	4.25	3.75		See formula note 1)
Accuracy @ IPN @ TA = +105C	X	% of IPN	5.22	4.55		See formula note 1)
Insulated test voltage (RMS)	Ud	kV	4.3	4.3	4.3	50/60 Hz/1 min
Impulse withstand voltage	W	kV	8	8	8	1.2/50 s
Partial discharge extinction voltage @ 10 pC (rms)	Ue	V	1650	1650	1650
Clearance (pri. - sec.)	dCI	mm	8	8	8	Shortest distance through air
Creepage distance (pri. - sec.)	dCp	mm	8	8	8	Shortest path along device body
Ambient operating temperature	TA	C	-40 to 105	-40 to 105	-40 to 105
Ambient storage temperature	TS	C	-40 to 105	-40 to 105	-40 to 105
Mass	m	g	10	10	10

2411261446_LEM-HO-25-P_C6053962.pdf

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