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Ams as5013 iqft integrated hall sensor ic supporting lateral displacement detection up to 2mm radius

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Ams as5013 iqft integrated hall sensor ic supporting lateral displacement detection up to 2mm radius

Out Type : I2C

Voltage - Supply : 2.7V~3.6V

Operating Temperature : -20℃~+80℃

Minimum Field : 30mT

Description : QFN-16(4x4) Angle, Linear Position Measuring RoHS

Mfr. Part # : AS5013-IQFT

Model Number : AS5013-IQFT

Package : QFN-16(4x4)

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Product Overview

The AS5013 is a low-power integrated Hall sensor IC designed for human interface applications, particularly in smart navigation key systems. It offers on-chip processing for rapid development cycles, eliminating the need for complex host processor integration. The single-chip IC features 5 Hall sensing elements for detecting lateral displacement up to 2mm, a high-resolution ADC, XY coordinate and motion detection engine, and a smart power management controller. It communicates position coordinates and magnetic field information via a 2-wire IC interface. Ideal for battery-operated devices like mobile phones and smart handheld devices, it supports contactless push-button functionality and motion detection.

Product Attributes

Brand: ams OSRAM
Product Name: AS5013
Package: QFN 4mmx4mmx0.55mm

Technical Specifications

Parameter	Conditions	Min	Typ	Max	Units	Description
Lateral Movement Radius	dx+dy			2	mm	Up to 2mm radius
Resolution (X and Y)			8		bit	8-bit resolution
Current Consumption (Standby)			3		A	Automatic low-power mode
Operating Voltage		2.7		3.6	V	Core supply voltage
Peripheral Supply Voltage		1.7			V	Down to 1.7V
IC Interface						High-speed IC interface
Raw Hall Output			12		bit	12-bit raw hall output
Package						QFN 4mmx4mmx0.55mm
Operating Temperature		-20		80	C	Ambient temperature range
Storage Temperature		-55		125	C
Power-up Time (Analog)				1000	s	Step on VDD to Data_Ready
Conversion Time (X/Y Coordinate)				450	s	Read X/Y coordinate IC ACK bit to Data_Ready
Wakeup Time (Nominal)		20		320	ms
Magnet Type			2	3	mm	Cylindrical; axial magnetized
Hall Array Diameter			2.2		mm
Magnetic Field Strength (BZ)	Measured at chip surface	30		120	mT	Vertical magnetic field at magnet center
Maximal Average Current Consumption (IDDs)	TAMB = -20C to 50C; Pulsed peaks = IDDf depends on ts[ms]	3+3760/ts			A	On VDD
Maximal Average Current Consumption (IDDs)	TAMB = 50C to 80C; Pulsed peaks = IDDf depends on ts[ms]	10+3760/ts			A	On VDD
Current Consumption (Idle Mode, no readout)	TAMB = -20C to 50C		3		A	On core supply
Current Consumption (Idle Mode, no readout)	TAMB = 50C to 80C		10		A	On core supply
Current Consumption (Idle Mode, continuous readout)	ts = 450s		10		mA	On core supply
Noise (RMS)	C1..C5 channel data			100	T
Power Supply Rejection Ratio (PSSR)	VDD=3.3V; Temp = 25C; dVDD= 100 mVpp at 10.30kHz		0.2		%/100 mV
High Level Input Voltage (SCL, SDA)	IIC	0.7 * VDDp			V
Low Level Input Voltage (SCL, SDA)	IIC			0.3 * VDDp	V
High Level Input Voltage (ADDR, RESETn)	JEDEC	0.65 * VDDp			V
Low Level Input Voltage (ADDR, RESETn)	JEDEC			0.35 * VDDp	V
Capacitive Load (SDA, Standard mode)	100kHz			400	pF
Capacitive Load (SDA, Fast mode)	400kHz			400	pF
Capacitive Load (SDA, High speed mode)	3.4MHz			100	pF
Capacitive Load (INTn, Standard mode)	100kHz			30	pF

2411220417_AMS-AS5013-IQFT_C19136151.pdf

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